Methods of forming semiconductor devices including mesa...

Details Methods of forming semiconductor devices including mesa... Methods of forming semiconductor devices including mesa...

H - Electricity

01

S

H01S 5/028 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2504099

A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.

La présente invention concerne un procédé de fabrication de dispositif à semiconducteurs qui peut consister à fabriquer une structure semi-conductrice sur un substrat, cette structure semi-conductrice définissant un mesa possédant une surface mesa opposée au substrat et des parois latérales mesa entre la surface mesa et le substrat. Une première couche de passivation peut être formée sur au moins des parties des parois latérales mesa et sur le substrat contigu à ces parois, au moins une partie de la surface mesa étant exempte de la première couche de passivation et, la première couche de passivation comprenant un premier matériau. Une deuxième couche de passivation peut être formée sur la première couche de passivation, une partie au moins de la surface mesa étant exempte de cette deuxième couche de passivation et, cette deuxième couche de passivation comprenant un deuxième matériau différent du premier matériau. Cette invention concerne aussi des dispositif associés.

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