Methods of making controlled segregated phase domain structures

Details Methods of making controlled segregated phase domain structures Methods of making controlled segregated phase domain structures

H - Electricity

01

L

H01L 31/18 (2006.01) H01L 31/032 (2006.01)

Patent

CA 2636790

A method includes providing a first precursor on a first substrate; providing a second precursor on a second substrate; contacting the first precursor and the second precursor; reacting the first precursor and the second precursor to form a chemical reaction product; and moving the first substrate and the second substrate relative to one another to separate the chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate, characterized in that, to control formation of a segregated phase domain structure within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location.

L'invention concerne un procédé qui comporte les étapes consistant à: mettre un précurseur sur un premier substrat; mettre un second précurseur sur un second substrat; mettre en contact le premier précurseur et le second précurseur; faire réagir le premier précurseur et le second précurseur pour former un produit de réaction chimique; et déplacer le premier substrat et le second substrat, l'un par rapport à l'autre, pour séparer le produit de réaction chimique du premier substrat et/ou du second substrat. Le procédé est caractérisé par l'apport, en vue de régler la formation d'une structure de domaines de phase séparés dans le produit de réaction chimique, d'un constituant du premier précurseur et/ou du second précurseur selon une quantité qui varie périodiquement de manière sensiblement régulière par rapport à une quantité moyenne en fonction de l'emplacement spatial de base.

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