Methods of treating a silicon carbide substrate for improved...

Details Methods of treating a silicon carbide substrate for improved... Methods of treating a silicon carbide substrate for improved...

H - Electricity

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H01L 21/04 (2006.01) C30B 29/32 (2006.01) C30B 31/00 (2006.01) C30B 33/00 (2006.01) H01L 21/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2474883

A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

L'invention concerne un procédé de traitement d'un substrat de carbure de silicium destiné à recevoir un dépôt épitaxique amélioré, et à être utilisé en tant que précurseur dans la fabrication de dispositifs de type diodes électroluminescentes. Ledit procédé comprend les étapes consistant: à implanter des atomes d'un dopant d'un premier type de conductivité dans la première surface d'une plaquette de carbure de silicium conductrice présentant le même type de conductivité que les ions d'implantation, à une ou plusieurs énergies d'implantation et de concentrations de dopant prédéterminées de manière à former un profil de dopant; à recuire la plaquette implantée; et à former une couche épitaxique sur la première surface implantée de ladite plaquette.

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