Micro-fluid ejection device having high resistance heater film

Details Micro-fluid ejection device having high resistance heater film Micro-fluid ejection device having high resistance heater film

B - Operations, Transporting

41

J

B41J 2/14 (2006.01) B41J 2/05 (2006.01) B81B 1/00 (2006.01)

Patent

CA 2552728

A semiconductor substrate for a micro-fluid ejection head. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of A1N, TaN, and TaA1 alloys, and has a sheet resistance ranging from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic% tantalum, from about 10 to about 40 atomic% aluminum and from about 5 to about 30 atomic% nitrogen.

L'invention concerne un substrat à semi-conducteur destiné à une tête d'éjection de microfluide. Ce substrat comprend plusieurs actionneurs d'éjection de fluide placés sur le substrat. Chacun des actionneurs d'éjection de fluide comprend une pile chauffante mince comprenant un dispositif de chauffage de film mince et une ou plusieurs couches protectrices adjacentes au dispositif de chauffage. Le dispositif de chauffage de film mince est fabriqué à partir d'une matière de film mince en tantale-aluminium-nitrure possédant une structure nanocristalline consistant essentiellement en des alliages d'AlN, TaN, et TaAl, et possède une résistance de couche comprise entre 30 et environ 100 ohms par carré. La matière de film mince contient entre environ 30 et 70 % de tantale atomique, entre environ 10 et 40 % d'aluminium atomique et entre 5 et 30 % d'azote atomique.

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