Microchannel avalanche photodiode

Details Microchannel avalanche photodiode Microchannel avalanche photodiode

H - Electricity

01

L

H01L 31/06 (2006.01)

Patent

CA 2654034

The inventive microchannel avalanche photodiode relates to semiconductor photosensitive devices, namely to semiconductor avalanche photodiodes with internal signal amplification. Said microchannel avalanche photodiode can be used for recording superweak light pulses up to single photons, gamma quanta and charged particles in medical gamma tomography devices, for radiation monitoring and nuclear physical experiments. The inventive device is characterised in that the avalanche photodiode, which comprises a substrate and semiconductor layers exhibiting different electrophysical properties and having common boundaries therebetween and with the substrate, is also provided with at least one two-dimension matrix of individual solid state areas which is formed therein and is embodied in the form of highly-conductive islands for forming potential micro-depths. In order to reduce a volume generation current and to improve a potential distribution uniformity along the device surface, the solid-state areas are located between two additional semiconductor layers exhibiting a high conductivity with respect the semiconductor layers with which they have the common interfaces. Said invention makes it possible to obtain such a potential distribution form in the device volume which allows photoelectrons to be collected on individual solid-state areas.

L'invention s'utilise dans l'enregistrement d'impulsions de lumière ultra-faibles, de quantas gamma et de particules chargées utilisées en tomographie médicale, en surveillance par rayonnement et dans des expériences de physique nucléaire. Selon l'invention, dans une photodiode avalanche qui comprend un substrat et des couches semi-conductrices possédant des frontières de séparation entre elles et avec le substrat, et possédant des propriétés électrophysiques différentes, on forme au moins une matrice bidimensionnelle d'îlots (domaines) isolés solides possédant une conductivité plus élevée, et ce afin de créer des micro-cavités potentielles.Les régions solides sont disposées entre deux couches semi-conductrices supplémentaires possédant une conductivité plus élevée par rapport aux couches semi-conductrices avec lesquelles elles partagent les mêmes frontières de séparation communes.

Affiliated with

Also associated with

Rating

Microchannel avalanche photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microchannel avalanche photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microchannel avalanche photodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1895972