H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/128
H01L 29/423 (2006.01) H01L 21/027 (2006.01) H01L 21/266 (2006.01) H01L 21/336 (2006.01) H01L 29/49 (2006.01) H01L 29/786 (2006.01)
Patent
CA 1194613
- 20 - Abstract A process for forming a doped region in a substrate which is in alignment with a circuit member by forming a masking member on a layer, the masking member defining the outline on the circuit member; and etching the layer employing the masking member as a mask to define the circuit member, the etching continuing such that the circuit member includes sloping side faces. Subsequently, a dopant species is implanted into the substrate so as to form the doped region, the dosage and energy of ions implanted being selected such that ions are partially blocked by the portion of the circuit member beneath the sloping side faces thereby providing a more lightly doped and more shallow distribution of implanted species region than in other regions.
407811
Kirby Eades Gale Baker
Rockwell International Corporation
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