Micromechanical thermoelectric sensor element

Details Micromechanical thermoelectric sensor element Micromechanical thermoelectric sensor element

H - Electricity

01

L

H01L 35/02 (2006.01)

Patent

CA 2133830

A thermoelectric sensor element (45,46,47) that is adapted to respond to thermal radiation is capable of manufacture into a sensor array on a single crystal semiconductor (10), such as silicon. An anisotropically etched pit (16) is provided under the sensing surface, and the pit (16) generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow for a high density of the sensor elements. The sensor elements arc manufactured of two dissimilar metals (45,46) in a sinuous pattern to provide the thermoelectric effect.

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