Microstructures and single-mask, single-crystal process for...

Details Microstructures and single-mask, single-crystal process for... Microstructures and single-mask, single-crystal process for...

H - Electricity

01

L

H01L 21/64 (2006.01) B81B 3/00 (2006.01) G01P 15/08 (2006.01) G01P 15/125 (2006.01) G02B 5/08 (2006.01) H01L 21/44 (2006.01)

Patent

CA 2154357

The invention provides a single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independent of crystal orientation. A dielectric mask (12) on a single-crystal substrate (154) is patterned to define isolating trenches. A protective conformal layer (28) is applied to the resultant structure. The conformal layer (28) on the floor of the trenches is removed and a second etch deepens the trench to expose the mesa walls which are removed during the release step by isotropic etching. A metal layer (44) is formed on the resultant structure providing opposed plates (156) and (158) of a capacitor. The cantilever beam (52) with the supporting end wall (152) extends the grid-like structure (150) into the protection of the deepened isolation trenches (54). A membrane can be added to the released structures to increase their weight for use in accelerometers, and polished for use as movable mirrors.

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