Microwave energized ion source for ion implantation

H - Electricity – 01 – L

Patent

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Details

H01L 21/265 (2006.01) H01J 3/00 (2006.01) H01J 3/04 (2006.01) H01J 27/18 (2006.01)

Patent

CA 2159028

A microwave energized ion source apparatus is disclosed. The ion source apparatus is supported by a support tube extending into a cavity defined by an ion source housing assembly and includes a dielectric plasma chamber, a pair of vaporizers, a microwave tuning and transmission assembly and a magnetic field generating assembly. The plasma chamber defines an interior region into which source material and ionizable gas are routed and includes a recessed portion. The plasma chamber is overlied by a cap having an arc slit through which generated ions exit the chamber. The microwave tuning and transmission assembly, which feeds microwave energy to the plasma chamber in the TEM mode, includes a coaxial microwave energy transmission line center conductor. An enlarged end of the center conductor fits into the recessed portion of the plasma chamber and transmits microwave energy to source materials in the chamber. The microwave center conductor extends through an evacuated portion of a coaxial tube surrounding the conductor. A vacuum sealing window spaced apart from the microwave window is disposed in or adjacent to the coaxial tube and from the boundary between the evacuated coaxial tube and a non-evacuated region. The arc slit cap is secured to a plasma chamber housing surrounding the plasma chamber and is adapted to interfit with a clamping assembly secured to an end ofthe support tube such that the arc slit is precisely aligned with a predetermined ion beam line. The microwave energy transmission line center conductor is coupled to a tuning center conductor which is slideably overlied by a pair of slug tuners. Moving the slug tuners along their paths of travel changes an impedance of the microwave energy input to the plasma chamber.

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