H - Electricity – 03 – B
Patent
H - Electricity
03
B
331/15
H03B 7/00 (2006.01) H03B 9/14 (2006.01)
Patent
CA 1115361
Abstract of the Disclosure Disclosed is a means for obtaining a high Q oscillator which is compact and is adapted to be readily incorporated into known forms of micro- wave integrated circuits, e.g. a parametric amplifier. The oscillator which for example may comprise a pump oscillator for a parametric amplifier includes efficient means for coupling to microstrip without destroying the high Q of the oscillator circuit. The negative resistance element<; which may be, for example, a Gunn diode, IMPATT diode or the like is located in a resonator cavity which is a combination of radial transmission line cavity and a rec- tangular waveguide cavity.
332066
Dickens Lawrence E.
Maki Douglas W.
Allen John A.
The United States Government As Represented By The Secretary Of
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