Microwave plasma etching

Details Microwave plasma etching Microwave plasma etching

H - Electricity

01

J

204/174

H01J 37/32 (2006.01)

Patent

CA 1172993

ABSTRACT OF THE DISCLOSURE A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a dis- charge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the discharge space, microwave electric field forming means for forming a microwave electric field in the discharge space, and substrates holding means for holding substrates to be processed in the vacuum chamber. In the microwave plasma etching, the discharge gas containing fluorine, hydrogen with or without oxygen provides excellent etching almost free from side etching.

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