C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/50 (2006.01) B01J 12/00 (2006.01) B01J 19/12 (2006.01) C23C 16/27 (2006.01) C23C 16/511 (2006.01) C30B 25/10 (2006.01) C30B 29/04 (2006.01) H01J 37/32 (2006.01) H05H 1/46 (2006.01)
Patent
CA 2069942
A B S T R A C T The present invention relates to a microwave plasma generating apparatus for generating plasma by radiating microwave pulses into a discharging space so adapted as to generate plasma of a large region in a given position, which is characterized by a plurality of microwave radiation means for continuously radiating microwave pulses by staggering the timing of radiation of the microwave pulses, and to a process for the preparation of a diamond layer, which is characterized by synthesizing. the diamond layer by taking advantage of the microwave plasma generating apparatus in order to efficiently form the diamond layer with a uniform film thickness on the substrate member of a wide area. The present invention provides a useful microwave plasma generating apparatus and method for the preparation of the diamond layer. 3 9
Hayashi Nariyuki
Isozaki Toshio
Itatani Ryohei
Hayashi Nariyuki
Idemitsu Petrochemical Company Limited
Isozaki Toshio
Itatani Ryohei
Swabey Ogilvy Renault
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