Microwave semiconductor device with improved thermal properties

Details Microwave semiconductor device with improved thermal properties Microwave semiconductor device with improved thermal properties

H - Electricity

01

L

356/119, 356/53,

H01L 29/06 (2006.01) H01L 23/36 (2006.01) H01L 25/07 (2006.01) H01L 29/864 (2006.01) H05K 7/20 (2006.01)

Patent

CA 1095178

Abstract of the Disclosure A microwave semiconductor device with improved thermal properties is disclosed wherein multiple active semiconductor bodies are disposed between two electrically and thermally isolated heat sinks. Two separate thermal paths are provided for heat produced within the semiconductor material. The maximum operating power of devices such as double-drift IMPATT diodes is greatly extended.

309907

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