Microwave semiconductor device working together with another...

Details Microwave semiconductor device working together with another... Microwave semiconductor device working together with another...

H - Electricity

01

L

356/184

H01L 29/00 (2006.01) H01L 23/14 (2006.01) H01L 23/66 (2006.01) H01L 25/16 (2006.01)

Patent

CA 1213079

16 ABSTRACT: In a high-frequency circuit arrangement, es- pecially passive parts of the circuit are realized in a semiconductor body in which active circuit elements of another semiconductor material are located in recesses in the semiconductor body. When it is ensured that the semi- plane, for example, the ground plane, can extend very close to the elements of the shorter connections, parasitic effects are considerably reduced. When only one active element is mounted and only connections for this element are formed on the semiconductor body, a very suitable support for mounting and measurement is obtained.

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