Miniband transport quantum well infrared detector

Details Miniband transport quantum well infrared detector Miniband transport quantum well infrared detector

H - Electricity

01

L

H01L 31/101 (2006.01) H01L 27/144 (2006.01) H01L 31/0352 (2006.01)

Patent

CA 2091053

2091053 9208250 PCTABS00013 A semiconductor device for detecting radiation includes a plurality of doped quantum wells having at least two bound states which are surrounded by a plurality of superlattice barrier layers having a miniband with an average energy that is approximately equal to one of the bound states of the quantum wells. Carriers photoexcited from the ground state to the excited states of the doped quantum wells are swept into the miniband by an externally applied electric field for collection as photocurrent. As a result, a wide range of quantum well widths and barrier heights along with a variety of materials and carrier types may be used so that an easier process of fabricating the semiconductor device results while providing improved device characteristic such as lowering the dark current.

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