Mis electrodes forming process

Details Mis electrodes forming process Mis electrodes forming process

H - Electricity

01

L

H01L 29/792 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01)

Patent

CA 2048206

Abstract of the Disclosure There is disclosed a process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium or sulfur-passivated, and then an insulation film being formed.

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