Mis transistor

Details Mis transistor Mis transistor

H - Electricity

01

L

H01L 29/788 (2006.01) H01L 21/336 (2006.01) H01L 29/786 (2006.01)

Patent

CA 2054498

An MIS field effect transistor is provided with a first conduction type semiconductor layer having a channel portion, a second conduction type impurity region which forms opposite source and drain portion with the channel portion therebetween, and a gate electrode provided on the channel portion with a gate insulating film therebetween, wherein the channel and source portions respectively consist of semiconductors having different energy band gaps. The transistor enables holes to be smoothly moved between the source and channel portions, and has good saturation properties and a high source-drain endurance voltage.

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