Modification of interfacial fields between dielectrics and...

H - Electricity – 01 – L

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H01L 21/31 (2006.01) H01L 21/28 (2006.01) H01L 21/3115 (2006.01) H01L 29/51 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1315420

ABSTRACT OF THE DISCLOSURE Reduction in the net charge at the interface of a dielectric and a semiconductor material is achieved by placing atomic species in the dielectric near the interface. Preferably, these species are selected from the group of alkaline earth metals. The presence of these atoms results in a redistribution of the electronic density near the interface. The placement of the atoms is effected by ion implantation followed by multiple annealing steps at alternating low and high temperatures.

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