Modification of interfacial fields between dielectrics and...

Details Modification of interfacial fields between dielectrics and... Modification of interfacial fields between dielectrics and...

H - Electricity

01

L

356/128

H01L 21/31 (2006.01) H01L 21/28 (2006.01) H01L 21/3115 (2006.01) H01L 29/51 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1315420

ABSTRACT OF THE DISCLOSURE Reduction in the net charge at the interface of a dielectric and a semiconductor material is achieved by placing atomic species in the dielectric near the interface. Preferably, these species are selected from the group of alkaline earth metals. The presence of these atoms results in a redistribution of the electronic density near the interface. The placement of the atoms is effected by ion implantation followed by multiple annealing steps at alternating low and high temperatures.

577875

Affiliated with

Also associated with

Rating

Modification of interfacial fields between dielectrics and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modification of interfacial fields between dielectrics and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modification of interfacial fields between dielectrics and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1324371