Molecular beam deposition process

Details Molecular beam deposition process Molecular beam deposition process

H - Electricity

01

L

356/124

H01L 21/20 (2006.01) H01L 21/203 (2006.01) H01L 21/26 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 29/10 (2006.01) H01S 5/32 (2006.01)

Patent

CA 1097431

PHB. 32,575. ABSTRACT: Method of making a semiconductor device which includes a III-V compound stratum. A film consisting of one of the elements Sn, Ge, Si, Be, Mn or Mg is deposited by a molecular beam epitaxy process on an exposed surface of the III-V compound stratum. A III-V compound layer doped with the element constituting the film is deposited over the film, when making, for example an F.E.T. An ohmic contact layer is deposited over the film to make an ohmic contact.

301038

Affiliated with

Also associated with

Rating

Molecular beam deposition process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Molecular beam deposition process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Molecular beam deposition process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-412640