C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
356/148, 356/178
C23C 14/56 (2006.01) C30B 23/02 (2006.01) C30B 29/40 (2006.01) H01L 21/20 (2006.01)
Patent
CA 1333039
A molecular beam epitaxy apparatus according to the present invention comprises a growth chamber evacuatable to a ultra high vacuum, and a holder support arranged in the growth chamber for supporting a substrate holder. The growth chamber has a mounting portion which is provided with a vaporizer for a group V element as well as with other vaporizers for additional materials. The vaporizers respectively have emission openings directed toward the center of the holder supported by the holder support. The emission openings of the additional material vaporizers are respectively closable by closure devices, whereas the emission opening of the group V element is always held open.
616594
Ishida Yuhji
Mushiage Masato
Tanaka Haruo
Marks & Clerk
Rohm Co. Ltd.
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