C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.4
C30B 23/06 (2006.01)
Patent
CA 1167358
- 1 - ABSTRACT A method of growing crystalline semi- conductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapour phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusion from a knudsen cell. The difficulties previously encountered using sulphur is such a cell are counteracted by use of an electrochemical cell as the sulphur source. The technique allows complicated doping profiles to be produced.
378104
Andrews David A.
Davies Graham J.
Heckingbotton Roger
Post Office
Ridout & Maybee Llp
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