Molecular beam epitaxy electrolytic dopant source

Details Molecular beam epitaxy electrolytic dopant source Molecular beam epitaxy electrolytic dopant source

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 23/06 (2006.01)

Patent

CA 1167358

- 1 - ABSTRACT A method of growing crystalline semi- conductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapour phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusion from a knudsen cell. The difficulties previously encountered using sulphur is such a cell are counteracted by use of an electrochemical cell as the sulphur source. The technique allows complicated doping profiles to be produced.

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