Molecular beam epitaxy (mbe) growth of semi-insulating...

Details Molecular beam epitaxy (mbe) growth of semi-insulating... Molecular beam epitaxy (mbe) growth of semi-insulating...

H - Electricity

01

L

H01L 21/20 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) H01L 21/203 (2006.01)

Patent

CA 2311061

A method of growing semi-insulating GaN epilayers by ammonia- molecular beam epitaxy (MBE) through intentional doping with carbon is described. Thick GaN layers of high resistivity are an important element in GaN based heterostructure field- effect transistors. A methane ion source is preferably used as the carbon dopant source.

Affiliated with

Also associated with

Rating

Molecular beam epitaxy (mbe) growth of semi-insulating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Molecular beam epitaxy (mbe) growth of semi-insulating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Molecular beam epitaxy (mbe) growth of semi-insulating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2083211