Molecular-beam epitaxy system and method including hydrogen...

Details Molecular-beam epitaxy system and method including hydrogen... Molecular-beam epitaxy system and method including hydrogen...

H - Electricity

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L

356/178

H01L 21/203 (2006.01) C30B 23/02 (2006.01)

Patent

CA 1102013

MOLECULAR-BEAM EPITAXY SYSTEM AND METHOD INCLUDING HYDROGEN TREATMENT Abstract of the Disclosure A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs or GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam is introduced and directed on the substrate during the epitaxy growth such that the presence of the hydrogen influences the physico-chemical process of surface interaction and therefore the quality of the epitaxy.

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