Molybdenum enhanced low-temperature deposition of...

Details Molybdenum enhanced low-temperature deposition of... Molybdenum enhanced low-temperature deposition of...

C - Chemistry, Metallurgy

23

C

C23C 16/34 (2006.01) C23C 16/30 (2006.01)

Patent

CA 2130335

2130335 9409178 PCTABS00032 A process is described for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

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