H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/116, 356/121
H01L 29/00 (2006.01) H01L 21/02 (2006.01) H01L 27/07 (2006.01) H01L 29/94 (2006.01)
Patent
CA 1128672
Monolithic Distributed Resistor-Capacitor Device and Circuit Utilizing Polycrystalline Semiconductor Material Abstract of the Disclosure A distributed resistor-capacitor device which is highly repro- ducible with near ideal electrical characteristics including a substrate, an insulating layer on a major surface of the substrate, and a polycrystalline semiconductor material on the insulating layer. The polycrystalline layer is the re- sistor and cooperates with the substrate as the capacitor. Fabrication of the device is compatible with integrated cir- cuit fabrication and can be used with field-effect and bi- polar junction transistors.
342567
Gerzberg Levy
Meindl James D.
Board Of Trustees Of The Leland Stanford Junior University
Smart & Biggar
LandOfFree
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