Monolithic ic and mems microfabrication process

Details Monolithic ic and mems microfabrication process Monolithic ic and mems microfabrication process

H - Electricity

01

L

H01L 29/00 (2006.01)

Patent

CA 2667742

Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent alteration of partially completed circuits and devices by subsequent high process temperatures.

La présente invention concerne des procédés de CI/MEMS monolithiques dans lesquels du nitrure de silicium hautement résistant est utilisé en tant que matériau mécanique tandis que du silicium amorphe sert de couche sacrificielle. Des circuits électroniques et des dispositifs micro-électromécaniques sont construits sur des zones séparées d'une plaque indépendante. La séquence des étapes de procédés de CI et de MEMS est conçue pour empêcher l'altération de circuits et de dispositifs partiellement complétés par des températures subséquentes de fonctionnement élevées.

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