H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/31
H01L 23/522 (2006.01) H01L 27/08 (2006.01)
Patent
CA 1162656
D-22646 ABSTRACT OF THE DISCLOSURE Monolithic integrated circuit structure incorporating a full wave diode bridge rectifier of four Schottky diodes. A body of silicon includes four zones of N-type material. The first and second N-type zones are separated from each other by encircling and intervening P-type material. The third and fourth N-type zones are contiguous. A Schottky barrier is formed adjacent to the surface of each zone by a layer of a mixed silicide of deposited titanium and tungsten. A first conductive member is connected to the N-type material of the first zone and the silicide layer of the third zone. A second conductive member is connected to the N-type material of the second zone and the silicide layer of the fourth zone. A third conductive member is connected in common to the silicide layers on the first and second zones. A fourth conductive member is connected to the N-type material of the third and fourth zones. An AC voltage applied across the first and second conductive members produces a DC voltage across the third and fourth con- ductive members.
375106
Gte Laboratories Incorporated
R. William Wray & Associates
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