Monolithic integrated circuit transistor having very low...

Details Monolithic integrated circuit transistor having very low... Monolithic integrated circuit transistor having very low...

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H01L 21/20 (2006.01) H01L 21/66 (2006.01) H01L 21/74 (2006.01) H01L 27/06 (2006.01) H01L 27/082 (2006.01) H01L 29/08 (2006.01) H01L 29/735 (2006.01)

Patent

CA 1047652

Application for Patent of CARL T. NELSON and BRIAN E. HOLLINS for A MONOLITHIC INTEGRATED CIRCUIT TRANSISTOR HAVING VERY LOW COLLECTOR RESISTANCE ABSTRACT OF THE DISCLOSURE A monolithic integrated circuit includes a vertical transistor having a low collector resistance with high current handling ability. The integrated circuit comprises a P type epitaxial layer grown on an N type substrate with both deep and shallow N type diffusions made into the P type layer. In the high current vertical transistor region with the deep N type diffusion, the deep diffusion penetrates the P layer to the N type substrate, whereas in the other transistor the shallow diffusion does not penetrate to the substrate. An N epitaxial layer is grown on the P type layer and thereafter normal processing techniques are used to form the base and emitter regions for the devices including the high current transistor which has its collector electrically coupled to the substrate.

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