G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/42 (2006.01)
Patent
CA 2318667
A monolithic semiconductor photo-coupler device comprises a substrate made of semiconductor material, and a groove made in one face of the substrate to receive and align an optical fiber. A wall of given thickness is formed in the semiconductor material of the substrate in the prolongation of the groove and transversally to this groove. The wall has, on the side of the groove, a first face generally perpendicular to the groove, and a second face opposite to the first face. The semiconductor material preferably comprises silicon whereby p-doped and n-doped regions can be produced on the first and second faces of the wall, respectively. These p- and n-doped regions are separated by an intrinsic semiconductor region. Finally, first and second electrodes are applied to the substrate in contact with the p- and n-doped regions. The p-doped region, the intrinsic semiconductor region and the n-doped region form a p-i-n photodetector capable of converting an optical signal from an optical fiber placed in the groove to an electric signal. When placed in the groove, the optical fiber is in direct alignment with the photodetector. The present invention is also concerned with a method for fabricating the above described monolithic semiconductor photo-coupler device.
Benoit Richard
Maj Tomasz
Rolston David R.
Bkp Gp
Fci Canada Inc.
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