Monolithic static memory cell

Details Monolithic static memory cell Monolithic static memory cell

G - Physics

11

C

356/197, 352/82.

G11C 11/34 (2006.01) G11C 11/35 (2006.01) H01L 27/11 (2006.01)

Patent

CA 1157951

ABSTRACT OF THE DISCLOSURE A monolithic static memory cell has a region of a first conducti- vity type extending from the upper surface of a semiconductor layer of a second conductivity type carried on a semiconductor body of the first conduc- tivity type and connected to a first drive line. A first zone of the semi- conductor layer adjacent the region is covered by a gate connected to a second drive line and separated from the semiconductor layer by a gate insu- lator. A second zone adjacent the first zone is covered by a conductive coating connected to a supply terminal, the conductive coating being separat- ed from the surface of the semiconductor layer by a thin electrically insulat- ing layer which admits a tunnel current between the surface of the semicon- ductor layer and the conductive coating.

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