Monolithic vertical junction field effect transistor and...

Details Monolithic vertical junction field effect transistor and... Monolithic vertical junction field effect transistor and...

H - Electricity

01

L

H01L 29/15 (2006.01)

Patent

CA 2576960

A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.

L'invention concerne un élément de commutation combinant un transistor à effet de champ à jonction verticale autoaligné comprenant une grille gravée-implantée et une diode de Schottky antiparallèle intégrée. L'anode de la diode est connectée à la source du transistor au niveau du dispositif afin de réduire les pertes dues aux inductances parasites. La surface de SiC dans la région anodique de la diode de Schottky est conditionnée par gravure au plasma afin d'abaisser la hauteur de la barrière de Schottky et de réduire ainsi les pertes d'énergie associées à la tension de mise en marche de la diode de Schottky.

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