H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/66 (2006.01) G01N 21/35 (2006.01) H01L 27/06 (2006.01) H01L 29/78 (2006.01) H01L 31/101 (2006.01) H01Q 9/26 (2006.01) H01Q 23/00 (2006.01) H03F 3/60 (2006.01)
Patent
CA 2710450
The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the an-tenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.
L'invention concerne un dispositif de détection d'ondes millimétriques, avec au moins un transistor à effet de champ qui présente une source, un drain, une grille, un contact grille-source, un canal source-drain et un contact grille-drain. L'invention vise, entre autres, à fournir un dispositif qui permette de fournir un transistor à effet de champ pour détecter la puissance et/ou la phase d'un rayonnement électromagnétique dans la gamme des fréquences térahertziennes. A cet effet, l'invention fournit un dispositif qui présente une structure d'antenne, sachant : que le transistor à effet de champ est relié à la structure d'antenne de telle sorte qu'un signal électromagnétique dans la gamme des fréquences térahertziennes, reçu par la structure d'antenne, est injecté par l'intermédiaire du contact grille-source dans le transistor à effet de champ; et que le transistor à effet de champ et la structure d'antenne sont disposés ensemble sur un unique substrat.
Haring Bolivar Peter
Oejefors Erik
Pfeiffer Ullrich
Roskos Hartmut
Johann Wolfgang Goethe-Universitaet Frankfurt A. M.
Shapiro Cohen
Universitaet Siegen
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