Monolithically integrated planar lasers differing in...

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H - Electricity

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H01S 3/23 (2006.01) H01L 27/15 (2006.01) H01S 5/40 (2006.01) H01S 5/026 (2006.01) H01S 5/042 (2006.01) H01S 5/22 (2006.01) H01S 5/227 (2006.01)

Patent

CA 1280197

MONOLITHICALLY INTEGRATED PLANAR LASERS DIFFERING IN EMISSION WAVELENGTHS AND PROCESSES FOR THEIR PREPARATION Abstract of the Disclosure Lasers differing in emission wavelengths are disclosed monolithically integrated in a common sub- strate providing positive index guiding of adjacent lasers. The lasers and the substrate together pre- sent a planar semiconductive surface. The monolithically integrated laser struc- ture is formed by providing laterally offset channels in a planar substrate surface and selectively deposi- ting cladding and active layers in the channels, with the composition of at least one of the cladding and active layers in one channel differing from that in another.

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