Monolithically integrated ridge waveguide semiconductor...

Details Monolithically integrated ridge waveguide semiconductor... Monolithically integrated ridge waveguide semiconductor...

H - Electricity

01

S

H01S 3/02 (2006.01) H01S 5/026 (2006.01) H01S 5/50 (2006.01)

Patent

CA 2046742

90-3-820 MONOLITHICALLY INTEGRATED RIDGE WAVEGUIDE SEMICONDUCTOR OPTICAL PREAMPLIFIER Abstract A monolithically integrated optical preamplifier com- prises an amplifying region, an optical detection region for detecting amplified light, and an optically transparent and electrically insulating isolation region interposed between the amplifying and optical detection regions. The amplifying region achieves reduced facet reflectivity by being designed to have a large spot size, single-traverse mode waveguide amplifier oriented at an angle with respect to a crystal plane through the preamplifier. The isolation region is preferably an air gap.

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