Monolithically integrated two-dimensional image sensor with...

Details Monolithically integrated two-dimensional image sensor with... Monolithically integrated two-dimensional image sensor with...

H - Electricity

04

N

354/63

H04N 3/14 (2006.01) H01L 27/146 (2006.01) H01L 31/14 (2006.01) H04N 3/15 (2006.01)

Patent

CA 1157954

ABSTRACT OF THE DISCLOSURE A monolithically integrated two-dimensional image sensor having an array of sensor elements disposed in rows and columns connected by respec- tive row and column lines. A first readout of the sensor elements is under- taken and a charge packet representing the signal is formed by an oppositely doped semi-conductor region connected to the respective column lines which charge packet contains charge carriers generated as a result of incident radiation as well as noise signals. A second readout of the sensor elements is undertaken for a short duration so that the charge packet generated as a result of the second readout represents only noise signals. A difference- forming stage connected to the image sensor has a storage capacitor associat- ed with each column line for subsequently storing the two signals such that the voltage at the capacitor is displaced from a reference potential in an amount representing the difference between the two signals which thus provides a signal to a serial output device such as a charge transfer device which represents only charge carriers generated by incident radiation and is substantially noise-free. The capacitors are connected to a reset device for preparing the difference-forming stage for the next readout sequence.

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