H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/14 (2006.01) H01L 27/02 (2006.01) H01L 27/144 (2006.01) H01L 27/15 (2006.01) H01L 27/16 (2006.01) H01L 29/205 (2006.01) H01L 29/225 (2006.01)
Patent
CA 2151658
A monolithically integrated, optoelectronic VLSI circuit is fabricated by growing optical devices on the compound semiconductor surface of a VLSI chip or wafer having pre-existing electronic devices formed thereon. In accordance with an illustrative embodiment of the present invention, a large array of surface normal optical modulating devices such as multiple quantum well modulators is grown on an impurity free surface of a VLSI chip having an array of FETs already provided thereon. The growth of such devices takes place at temperatures below 430°C on a compound semiconductor surface which has a highly ordered atomic structure. An optoelectronic switch constructed in this manner is capable of addressing electronic chips in systems handling 10,000 or more input/output optical beams.
Cunningham John Edward
Goossen Keith Wayne
Jan William Young
Pathak Rajiv Nath
Walker James Albert
At&t Corp.
Kirby Eades Gale Baker
LandOfFree
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