G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.3
G11C 11/08 (2006.01) G11C 11/402 (2006.01) G11C 11/412 (2006.01) G11C 11/419 (2006.01) H03K 3/355 (2006.01)
Patent
CA 1104721
ABSTRACT OF THE DISCLOSURE: Memory cells in a random access memory system are addressed through associated X and Y address lines. Each memory cell is operable as a static memory device to represent "1" binary data in response to a first control potential applied to the associated X address line and a first data input potential applied to the associated Y address line and further operable as a nonstatic memory device to represent "0" binary data in response to the first control potential applied to the X address line and to a second data input potential applied to the Y address line. The stored "0" binary data are simultaneously refreshed by application of a second control potential lower than the first control potential to all of the X address lines at periodic intervals and simultaneously therewith by application of the second data input potential to all of the Y address lines.
258891
Matsushita Electric Industrial Co. Ltd.
Robic Robic & Associes/associates
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