Mos-cascoded bipolar current sources in non-epitaxial structure

Details Mos-cascoded bipolar current sources in non-epitaxial structure Mos-cascoded bipolar current sources in non-epitaxial structure

H - Electricity

01

L

356/127

H01L 27/04 (2006.01) H01L 27/07 (2006.01) H03M 1/00 (2006.01)

Patent

CA 1232366

ABSTRACT OF THE DISCLOSURE A 16-bit D/A converter formed on a single mono- lithic chip and having two cascaded stages each including a 256-R resistor string DAC. The analog output voltage of the first stage is coupled to the second stage by two buffer amplifiers each formed by a non-epitaxial process using a P-type substrate. The amplifiers include NMOS and PMOS-cascoded bipolar current sources arranged to avoid the use of metallization to provide for electrical interconnections within the source.

474568

Affiliated with

Also associated with

Rating

Mos-cascoded bipolar current sources in non-epitaxial structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mos-cascoded bipolar current sources in non-epitaxial structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mos-cascoded bipolar current sources in non-epitaxial structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1323153