G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.3
G11C 11/40 (2006.01) G11C 11/35 (2006.01) G11C 11/404 (2006.01) H01L 27/108 (2006.01)
Patent
CA 1129550
- 1 - J. T. Clemens 1-1-7-3-1 MOS DYNAMIC MEMORY IN A DIFFUSION CURRENT LIMITED SEMICONDUCTOR STRUCTURE Abstract of the Disclosure In a dynamic MOS (Metal Oxide Semiconductor) random access memory, reverse bias leakage currents which deplete stored charges are reduced by minimizing minority carrier generation-type currents. By so minimizing these currents, the leakage currents become dominated by minority carrier diffusion currents. The memory is ideally formed in an upper semiconductor layer of a layered structure. The semiconductor layer is grown epitaxially with a relatively low dopant concentration on a semiconductor substrate with a dopant concentration of the same conductivity type and about three orders of magnitude greater than that of the epitaxially grown layer. The epitaxially grown structure is advantageously suited for the memory circuits in that it may be formed with very low leakage currents. The material further offers by its layered structure a basis for optimizing dynamic memory device characteristics.
314979
Clemens James T.
Mehta Dinesh A.
Nelson James T.
Pearce Charles W.
Sun Robert C.
Kirby Eades Gale Baker
Western Electric Company Incorporated
LandOfFree
Mos dynamic memory in a diffusion current limited... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mos dynamic memory in a diffusion current limited..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mos dynamic memory in a diffusion current limited... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-760444