Mos ic reverse battery protection

Details Mos ic reverse battery protection Mos ic reverse battery protection

H - Electricity

02

H

328/200

H02H 3/18 (2006.01) H01L 23/58 (2006.01) H01L 27/02 (2006.01) H02H 11/00 (2006.01)

Patent

CA 1314311

72094-25 ABSTRACT A field effect transistor has its drain and source regions connected between one of the two supply pads of an opera- tive integrated circuit, the gate of the field-effect transistor being connected to the other pad such that the gate is negatively biased during reverse battery to prevent current flow through the circuit in this condition and, hence, to prevent destruction of the circuit. The FET is sized to have minimal voltage drop during normal, forward battery operation of the circuit. The FET can be implemented as either an N-channel or a P-channel device.

576060

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