H - Electricity – 02 – H
Patent
H - Electricity
02
H
356/30
H02H 7/20 (2006.01) H01L 27/02 (2006.01) H01L 27/07 (2006.01) H01L 27/085 (2006.01) H01L 29/76 (2006.01) H03F 1/52 (2006.01) H03K 17/0812 (2006.01)
Patent
CA 1068008
MOS INPUT PROTECTION STRUCTURE Abstract of the Disclosure A breakdown preventing protection structure for an insulated gate field effect semiconductor device is disclosed for limiting input voltages to levels not substantially exceeding the supply voltage. A planar insulated gate field effect protection transistor is pro- vided in series with the input. The protection transistor includes a source forming the circuit input, a drain con- nected to the gate of the device to be protected, and a gate electrode connected to the supply voltage which also supplies the device to be protected. A shunting protec- tive diode may be included at the source of the protection transistor to limit negative input voltages to the diode threshold voltage and positive input voltages to the reverse avalanche breakdown of the protective diode. The protection circuit is particularly well suited to protect V-groove metal oxide semiconductor devices which have breakdown voltages well below breakdown voltages of conventional planar MOS transistor devices.
269582
American Microsystems
Na
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