Mos varactor structure with engineered voltage control range

Details Mos varactor structure with engineered voltage control range Mos varactor structure with engineered voltage control range

H - Electricity

01

L

H01L 29/93 (2006.01) H01G 4/10 (2006.01) H01L 27/08 (2006.01) H01L 29/94 (2006.01)

Patent

CA 2311080

The present invention relates to a metal oxide semiconductor (MOS) varactor that takes advantage of the beneficial characteristics of MOS varactors to provide a high maximum to minimum capacitance ratio. By coupling in parallel at least one pair of MOS varactors with similar but shifted capacitance voltage (C-V) curves, the resulting capacitance is generally linear while preserving the desirable large capacitance ratio. A pair of MOS varactors, one with a p+ type gate and one with a n+ doped gate connected in parallel approximates the desired result. However, by adding further varactor elements, with their threshold voltages shifted by either implanting specific properties in their bodies or by providing offset voltages, a more linear C-V curve is attained while preserving the desired capacitance ratio.

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