Mosfet-gated bipolar transistors and thyristors with both...

Details Mosfet-gated bipolar transistors and thyristors with both... Mosfet-gated bipolar transistors and thyristors with both...

H - Electricity

01

L

356/31

H01L 29/74 (2006.01)

Patent

CA 1206274

MOSFET-GATED BIPOLAR TRANSISTORS AND THYRISTORS WITH BOTH TURN-OFF CAPABILITY HAVING SINGLE-POLARITY GATE INPUT SIGNAL ABSTRACT OF THE DISCLOSURE MOSFET-gate bipolar transitor and thyristor integrated devices combining devices, respective turn-on and turn-off control devices, MOSFET. The gates of the two MOSFETs are connected to a single device gate terminal. The Conduction channel of the depletion mode MOSFET is preferable an implanted region. With gate voltage of appropriate polarity applied, the depletion mode MOSFET is non-conducting and the enhancement mode MOSFET is conducting, biasing the included bipolar transistor or thyristor into conduction. With zero gate voltage applied, the depletion mode MOSFET conducts and the enhancement mode MOSFET is non- conducting, turning off the included bipolar transistor or thyristor. Significantly, only a single polarity gate input signal is required.

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