H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/126
H01L 29/78 (2006.01) H01L 21/265 (2006.01) H01L 29/10 (2006.01) H01L 29/167 (2006.01)
Patent
CA 1130473
MOSFET SUBSTRATE SENSITIVITY CONTROL Abstract The sensitivity of the threshold voltage in MOSFET devices to changes in substrate voltage may be reduced at a given temperature by the introduction of sufficiently deep energy level, low diffu- sivity impurities into the depletion region under the gate of the MOSFET. Y0978-020
337644
Crowder Billy L.
Gaensslen Fritz H.
Jaeger Richard C.
International Business Machines Corporation
Na
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