Mosfet transistor and method of fabrication

Details Mosfet transistor and method of fabrication Mosfet transistor and method of fabrication

H - Electricity

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356/77

H01L 21/22 (2006.01) H01L 21/00 (2006.01) H01L 21/336 (2006.01) H01L 23/485 (2006.01) H01L 29/00 (2006.01) H01L 29/08 (2006.01) H01L 29/94 (2006.01)

Patent

CA 1038967

ABSTRACT OF THE DISCLOSURE An n channel MOSFET transistor which includes doping of previously formed source and drain elements with a heavy diffusion of phosphorous or arsenic creating n++ regions in the source and drain. The extra diffusion step is preferably accomplished just prior to contact metalization.

221639

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