Mt cvd process

C - Chemistry – Metallurgy – 23 – C

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C23C 16/36 (2006.01) C23C 16/44 (2006.01)

Patent

CA 2360713

The present invention comprises a method for coating at least one substrate with a carbonitride-containing coating by a MT CVD process which includes heating a substrate (52) or substrates (52) to a reaction temperature in a reaction chamber (10) and then introducing into the reaction chamber (10) a deposition process gas comprising from about 1 to about 30 % of a hydrogen halide and predetermined amounts of a carbon/nitrogen source, a metal-halogen compound, H2, and optionally N2 so that a layer of the carbonitride-containing coating deposits (48) on the surface of the substrates (52) or substrates (52). The present invention also includes embodiments for coating at least one substrate (52) with a carbonitride-containing coating (48) by a MT CVD process which includes maintaining a temperature gradient in the reaction chamber (10) during the introduction of the deposition process gas into the reaction chamber. Carbonitride-containing coatings (48) that may be applied by the method include carbonitrides, oxycarbonitrides, and borocarbonitrides of Ti, Hf, Zr, V, Nb, and Ta and their mixtures and alloys.

L'invention porte sur un procédé de dépôt chimique en phase vapeur à température moyenne d'une couche contenant du carbonitrure sur au moins un substrat consistant à porter le ou les substrats (52) à la température de réaction dans une chambre (10) de réaction, puis à y introduire un gaz de processus comportant: d'environ 1 à environ 30 % d'halogénure d'hydrogène; une quantité donnée d'une source de carbone/azote; un composé halogénométallique; du H¿2?; et facultativement du N¿2?, pour obtenir le dépôt d'une couche contenant du carbonitrure sur la surface du ou des substrats. L'invention porte également sur des variantes de dépôt chimique en phase vapeur à température moyenne sur au moins un substrat (52) de couches (48) contenant du carbonitrure consistant à maintenir un gradient de température dans la chambre de réaction (10) pendant l'introduction du gaz de processus. Les dépôts (48) contenant du carbonitrure applicables par ce procédé comprennent des carbonitrures, des oxycarbonitrures et des borocarbonitrures de Ti, Hf, Zr, V, Nb, et Ta ainsi que leurs mélanges et alliages.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Mt cvd process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mt cvd process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mt cvd process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1507353

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.