Multi-beam semiconductor laser and method for producing the...

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H01S 5/40 (2006.01) H01L 33/00 (2006.01) H01S 5/024 (2006.01) H01S 5/026 (2006.01) H01S 5/06 (2006.01) H01S 5/068 (2006.01) H01S 5/223 (2006.01) H01S 5/323 (2006.01) H01S 3/025 (1990.01) H01S 3/085 (1990.01)

Patent

CA 2089900

This is disclosed a multi-beam semiconductor laser comprising: an active layer; a first and second cladding layer sandwiching the active layer, the second cladding layer being made of a first material; a contact layer provided on the second cladding layer; a current block layer provided in the second cladding layer, the current block layer being made of a second material and being spaced from the active layer with a predetermined distance; a dividing part provided above the current block for physically dividing the contact layer into two areas; and electrodes respectively provided on the divided areas of the contact layer.

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