Multi-bit read only memory cell sensing circuit

Details Multi-bit read only memory cell sensing circuit Multi-bit read only memory cell sensing circuit

G - Physics

11

C

352/82

G11C 17/00 (2006.01) G11C 11/56 (2006.01)

Patent

CA 1167963

MULTI-BIT READ ONLY MEMORY CELL SENSING CIRCUIT ABSTRACT OF THE DISCLOSURE A multi-bit read only memory sensing circuit (10) is provided. A plurality of storage transistors (30, 32, 34, 36) are arranged in rows (28) and columns (20, 22) and each have a predefined permanent threshold voltage. A plurality of reference transistors (40, 42, 443 are provided. Circuitry (100, 102, 104, 106) is provided for selectively comparing the output voltage of ones of the plurality of reference transistors (40, 42, 44) to the output voltage of the plurality of storage transistors (30, 32, 34, 36) to thereby determine the voltage level stored in each of the plurality of storage transistors (30, 32, 34, 36).

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