H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/138
H01L 29/00 (2006.01) H01L 27/06 (2006.01) H01L 29/15 (2006.01) H01L 29/51 (2006.01) H01L 29/772 (2006.01)
Patent
CA 1186807
Abstract of the Disclosure A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its pre- ferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons.
427687
Aucoin Thomas R.
Ferry David A.
Iafrate Gerald J.
Aspila Kalevi P.
The Dow Chemical Company
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