G - Physics – 03 – F
Patent
G - Physics
03
F
117/125, 96/266
G03F 7/11 (2006.01) G03F 7/09 (2006.01) G03F 7/36 (2006.01)
Patent
CA 2010169
Abstract of the Disclosure A multi-layer resist comprising (A) a layer of a Langmuir-Blodgett film, (B) a layer of at least one thin film and (C) a substrate, said layer (B) being placed between said layer (A) and said substrate (C). The multi-layer resists of the invention are applicable to ultra fine processing on the order of submicron, half- micron or quater-micron, and the number of defects can be remarkably decreased.
Awaji Hiroshi
Mizunuma Satoshi
Uekita Masakazu
Awaji Hiroshi
Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
Mizunuma Satoshi
Osler Hoskin & Harcourt Llp
Uekita Masakazu
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